Electrical and Thermal Characterization of MESFETs, HEMTs and HBTs


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Descripci贸

This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers.

Detalls del producte

Editorial
Artech House Publishers
Data de publicaci贸
Idioma
Angl猫s
Tipus
Tapa dura
EAN/UPC
9780890067499
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